Pn Junction Current Drift

Therefore the correct answer is option a. Drift current occurs whenever there an some electric field that causes the carriers to exhibit a net flow.

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The drift current flowing from the p side to the n side if the junction is forward biased is false but the drift current flowing from the n side to the p side if the junction is reverse biased is true.

Pn junction current drift. Drift current in a p n junction diode in a p n junction diode electrons and holes are the minority charge carriers in the p region and the n region respectively. For example the current near the depletion region of a pn junction is dominated by the diffusion current. In a pn junction the electric field is produced when a p type and an n type semiconductor are brought together.

The diffusion current and drift current together are described by the driftdiffusion equation. Therefore it is present even when it is in equilibrium. An abrupt silicon p n junction n a 10 16 cm 3 and n d 4 x 10 16 cm 3 is biased with v a 06 v.

It is necessary to consider the part of diffusion current when describing many semiconductor devices. First of all thank you very much for asking me to answera2a. Inside the depletion region both diffusion current and drift current are present.

In an unbiased junction due to the diffusion of charge carriers the diffusion current which flows from the p to n region is exactly balanced by the equal and opposite drift current. Hence the option d overall is false. But still let me keep things short.

The question you asked is a thorn in brain to many peoplei think already mrnarendra joshi answered your question satisfactorily. Drift and diffusion current https. Calculate the ideal diode current assuming that the n type region is much smaller than the diffusion length with w n 1 mm and assuming a long p type region.

This means both drift current and diffusion current are present in equilibrium but the total current density j 0 now how could that be. Drift and diffusion currents. However pn junction diodes are considered a minority carrier device due to the current control coming from the diffusion of minority carriers.

Theory of p n junction diode diode current equation https.

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